收藏本站
W25Q16V
11.7 AC Electrical Characteristics ( cont’d)
SPEC
DESCRIPTION
SYMBOL
ALT
MIN
TYP
MAX
UNIT
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
t CHHH
t HHCH
t CHHL
5
5
5
ns
ns
ns
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
t HHQX (2)
t HLQZ (2)
t WHSL (3)
t SHWL (3)
t DP (2)
t RES 1 (2)
t LZ
t HZ
20
100
7
12
3
3
ns
ns
ns
ns
μs
μs
Signature Read
/CS High to Standby Mode with Electronic Signature
t RES 2 (2)
1.8
μs
Read
/CS High to next Instruction after Suspend
t SUS (2)
20
μs
Write Status Register Time
Byte Program Time (First Byte) (4)
Additional Byte Program Time (After First Byte) (4)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
t W
t BP1
t BP2
t PP
t SE
t BE 1
t BE 2
t CE
10
30
6
1.5
120
0.5
0.75
15
15
50
12
3
200
1
1.5
30
ms
μs
μs
ms
ms
s
s
s
Notes:
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/f C .
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP0 is set to 1.
For multiple bytes after first byte within a page, t BPN = t BP1 + t BP2 * N (typical) and t BPN = t BP1 + t BP2 * N (max), where N =
number of bytes programmed.
Publication Release Date: October 7, 2009
- 51 -
Revision E
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W25Q32BVZPIG IC SPI FLASH 32MBIT 8WSON
W25Q32DWZEIG IC FLASH SPI 32MBIT 8WSON
W25Q40BWSSIG IC FLASH SPI 4MBIT 8SOIC
W25Q40BWZPIG IC FLASH SPI 4MBIT 8WSON
W25Q64BVSFIG IC SPI FLASH 64MBIT 16SOIC
W25Q64CVZEIG IC SPI FLASH 64MBIT 8WSON
W25Q64DWZEIG IC FLASH SPI 64MBIT 8WSON
W25Q64FVSFIG IC SPI FLASH 64MBIT 16SOIC
相关代理商/技术参数
W25Q16VSSIG 功能描述:IC FLASH 16MBIT 80MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ
W25Q16VZPIG 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BW 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BWSNIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BWSNIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BWUXIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BWUXIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BWZPIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI